6MBP100VDA120-50 IGBT. Datasheet pdf. Equivalent

   Type Designator: 6MBP100VDA120-50
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: MODULE

6MBP100VDA120-50 Transistor Equivalent Substitute - IGBT Cross-Reference Search

6MBP100VDA120-50 Datasheet (PDF)

0.1. Size:376K fuji
6mbp100vda120-50.pdf

http://www.fujielectric.com/products/semiconductor/6MBP100VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 100A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big dec

4.1. Size:361K fuji
6mbp100vda060-50.pdf

http://www.fujielectric.com/products/semiconductor/6MBP100VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 100A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr

7.1. Size:2629K fuji
6mbp100na060-01.pdf