6MBP100VDA120-50 Даташит. Аналоги. Параметры и характеристики.
Наименование: 6MBP100VDA120-50
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 417 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.4 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
6MBP100VDA120-50 Datasheet (PDF)
6mbp100vda120-50.pdf

http://www.fujielectric.com/products/semiconductor/6MBP100VDA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 100A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big dec
6mbp100vda060-50.pdf

http://www.fujielectric.com/products/semiconductor/6MBP100VDA060-50 IGBT ModulesIGBT MODULE (V series)600V / 100A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching High performance and high reliability IGBT with overheating protection Higher reliability because of a big decr
Другие IGBT... 6MBI75U2A-060 , 6MBI75VA-060-50 , 6MBI75VA-120-50 , 6MBI75VW-060-50 , 6MBI75VW-120-50 , 6MBP100NA060-01 , 6MBP100RA060 , 6MBP100VDA060-50 , FGH60N60SFD , 6MBP10VAA120-50 , 6MBP150RA-060 , 6MBP150VDA060-50 , 6MBP150VEA120-50 , 6MBP15VAA120-50 , 6MBP200RA060 , 6MBP200VDA060-50 , 6MBP200VEA060-50 .
History: 2SH13 | DF160R12W2H3_B11 | MMG200Q120B6HN | 2MBI150VA-060-50 | CM300DU-12NFH | ISL9V2040S3S | TT075U065FBC
History: 2SH13 | DF160R12W2H3_B11 | MMG200Q120B6HN | 2MBI150VA-060-50 | CM300DU-12NFH | ISL9V2040S3S | TT075U065FBC



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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