IRG4IBC20FD IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4IBC20FD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 34 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 14.3 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 37 pF
Qgⓘ - Total Gate Charge, typ: 27 nC
Package: TO220F
IRG4IBC20FD Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4IBC20FD Datasheet (PDF)
irg4ibc20fd.pdf
PD -91750AIRG4IBC20FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.66V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.66V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi
irg4ibc20w.pdf
PD 91785AIRG4IBC20WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.16VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 6
irg4ibc20ud.pdf
PD -91752AIRG4IBC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200G kHz in resonant mode IGBT co-packaged with HEXF
irg4ibc20kd.pdf
PD -91689AIRG4IBC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.27V para
Datasheet: IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , FGH30S130P , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S .
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