IRG4IBC20FD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRG4IBC20FD Specs and Replacement

   Type Designator: IRG4IBC20FD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 34 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 14.3 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.66 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 37 pF
   Qg ⓘ - Total Gate Charge, typ: 27 nC
   Package: TO220F

IRG4IBC20FD Substitution

- IGBT ⓘ Cross-Reference Search

IRG4IBC20FD datasheet

..1. Size:226K international rectifier
irg4ibc20fd.pdf pdf_icon

PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.66V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.66V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi... See More ⇒

5.1. Size:157K international rectifier
irg4ibc20w.pdf pdf_icon

PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 6... See More ⇒

5.2. Size:331K international rectifier
irg4ibc20ud.pdf pdf_icon

PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode IGBT co-packaged with HEXF... See More ⇒

5.3. Size:207K international rectifier
irg4ibc20kd.pdf pdf_icon

PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V para... See More ⇒

Specs: IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , FGW75N60HD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S .