BSM25GD120DN2_E3224 PDF Specs and Replacement
Type Designator: BSM25GD120DN2_E3224
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Package: MODULE
BSM25GD120DN2_E3224 Substitution
BSM25GD120DN2_E3224 PDF specs
bsm25gd120dn2 e3224.pdf
BSM 25 GD 120 DN2 E3224 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage... See More ⇒
bsm25gd120dn2.pdf
BSM 25 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1... See More ⇒
bsm25gal120dn2.pdf
BSM 25 GAL 120 DN2 IGBT Power Module Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GAL 120 DN2 1200V 38A HALF BRIDGE GAL 1 C67076-A2009-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 ... See More ⇒
bsm25gb120dn2.pdf
BSM 25 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 25 GB 120 DN2 1200V 38A HALF-BRIDGE 1 C67076-A2109-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE ... See More ⇒
Specs: BSM200GB120DN2 , BSM200GB170DLC , BSM200GB60DLC , BSM200GD60DLC , BSM20GD60DLC_E3224 , BSM25GAL120DN2 , BSM25GB120DN2 , BSM25GD120DN2 , GT60N321 , BSM300GA120DLC , BSM300GA120DLCS , BSM300GA120DN2 , BSM300GA120DN2S , BSM300GA170DLC , BSM300GA170DN2 , BSM300GA170DN2E3166 , BSM300GA170DN2S .
Keywords - BSM25GD120DN2_E3224 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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