All IGBT. 10N50E1D Datasheet

 

10N50E1D IGBT. Datasheet pdf. Equivalent

Type Designator: 10N50E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 10A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO220

10N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

10N50E1D Datasheet (PDF)

1.1. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

10N50E1D
10N50E1D

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max. EMITTER COLLECTOR TFALL: 1s, 0.5s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impedance Anti-Paral

5.1. sthi10n50-fi.pdf Size:439K _st2

10N50E1D
10N50E1D

5.2. fqb10n50cftm.pdf Size:594K _fairchild_semi

10N50E1D
10N50E1D

October 2013 FQB10N50CF N-Channel QFET® FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductor’s proprietary planar stripe • Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been esp

 5.3. fdp10n50u fdpf10n50ut.pdf Size:483K _fairchild_semi

10N50E1D
10N50E1D

November 2009 UniFETTM FDP10N50U / FDPF10N50UT tm N-Channel MOSFET 500V, 8A, 1.05? Features Description RDS(on) = 0.85? ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis- tors are p roduced using Fa irchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 9pF) This advan ce technology has been espec

5.4. fqp10n50cf fqpf10n50cf.pdf Size:987K _fairchild_semi

10N50E1D
10N50E1D

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 16pF) This advanced technology has been espe

 5.5. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi

10N50E1D
10N50E1D

January 2009 UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85? Features Description RDS(on) = 0.71? ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC) DMOS technology. Low Crss ( Typ. 10pF) This advance technology has been especial

5.6. zxt10n50de6.pdf Size:229K _diodes

10N50E1D
10N50E1D

ZXT10N50DE6 SuperSOT 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATUR

5.7. ixzh10n50la ixzh10n50lb.pdf Size:261K _ixys

10N50E1D
10N50E1D

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings TJ = 25°C to 150°C VDSS 500 V TJ = 25°C to 150°C; RGS = 1 MΩ VDGR 500 V Continuous VGS ±20 V Transient VG

5.8. ixz2210n50l.pdf Size:247K _ixys

10N50E1D
10N50E1D

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note: All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes

5.9. ixz210n50l.pdf Size:318K _ixys

10N50E1D
10N50E1D

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note: All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes

5.10. 10n50.pdf Size:166K _utc

10N50E1D
10N50E1D

UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand 1 high e

5.11. aotf10n50fd.pdf Size:330K _aosemi

10N50E1D
10N50E1D

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150℃ The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) < 0.75Ω popular AC-DC applications. By providing low RDS(on), Ciss an

5.12. cs10n50f a9r.pdf Size:272K _crhj

10N50E1D
10N50E1D

Silicon N-Channel Power MOSFET R ○ CS10N50F A9R General Description: VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.13. cs10n50 a8r.pdf Size:266K _crhj

10N50E1D
10N50E1D

Silicon N-Channel Power MOSFET R ○ CS10N50 A8R General Description: VDSS 500 V CS10N50 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

5.14. mdf10n50th.pdf Size:748K _magnachip

10N50E1D
10N50E1D

 MDF10N50 N-Channel MOSFET 500V, 10 A, 0.75Ω General Description Features The MDF10N50 uses advanced MagnaChip’s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 10.0A @ V = 10V D GS switching performance and excellent quality. R ≤ 0.75Ω @ V = 10V DS(ON) GS MDF10N50 is suitable device for SMPS, high Speed Applications switching and gene

5.15. mdp10n50th.pdf Size:729K _magnachip

10N50E1D
10N50E1D

 MDP10N50 N-Channel MOSFET 500V, 10.0 A, 0.75Ω General Description Features The MDP10N50 uses advanced Magnachip’s VDS = 500V MOSFET Technology, which provides low on- ID = 10.0A @VGS = 10V state resistance, high switching performance RDS(ON) < 0.75Ω @VGS = 10V and excellent quality. MDP10N50 is suitable device for SMPS, HID and general purpose applications.

Datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

Back to Top

 


10N50E1D
  10N50E1D
  10N50E1D
 

social 

LIST

Last Update

IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

Back to Top