TGL75N120FDR Datasheet. Specs and Replacement

Type Designator: TGL75N120FDR  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 658 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.79 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V

tr ⓘ - Rise Time, typ: 23 nS

Coesⓘ - Output Capacitance, typ: 171 pF

Qg ⓘ - Total Gate Charge, typ: 488 nC

Package: TO264

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TGL75N120FDR datasheet

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TGL75N120FDR

TGL75N120FDR Field Stop Trench IGBT Features TO - 264 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGL75N120FDR TO-264 TGL75N120FDR ... See More ⇒

Specs: CRG60T60AN3H, TGPF15N60FDR, TGPF20N60FDR, TGH80N65F2D2, 1MB03D-120, 1MB05-120, 1MB05D-120, 1MB08-120, 1MB08D-120

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