All IGBT. 10N50E1D Datasheet

 

10N50E1D IGBT. Datasheet pdf. Equivalent

Type Designator: 10N50E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO220

10N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

10N50E1D IGBT. Datasheet pdf. Equivalent

Type Designator: 10N50E1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO220

10N50E1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

10N50E1D Datasheet (PDF)

0.1. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

10N50E1D
10N50E1D

HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impeda

9.1. sthi10n50-fi.pdf Size:439K _st

10N50E1D
10N50E1D

9.2. fdp10n50f fdpf10n50ft.pdf Size:409K _fairchild_semi

10N50E1D
10N50E1D

January 2009UniFETTMFDP10N50F / FDPF10N50FTN-Channel MOSFET 500V, 9A, 0.85Features Description RDS(on) = 0.71 ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 10pF)This advance technology has

 9.3. fdp10n50u fdpf10n50ut.pdf Size:483K _fairchild_semi

10N50E1D
10N50E1D

November 2009UniFETTMFDP10N50U / FDPF10N50UTtmN-Channel MOSFET500V, 8A, 1.05Features Description RDS(on) = 0.85 ( Typ.) @ VGS = 10V, ID = 4A These N-Channel enhancement mode power field effect transis-tors are p roduced using Fa irchilds proprietary, planar stripe, Low Gate Charge ( Typ. 18nC)DMOS technology. Low Crss ( Typ. 9pF)This advan ce technology

9.4. fqb10n50cftm.pdf Size:594K _fairchild_semi

10N50E1D
10N50E1D

October 2013FQB10N50CFN-Channel QFET FRFET MOSFET500 V, 10 A, 610 mFeatures Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using Fairchild Semiconductors proprietary planar stripe Low gate charge ( Typ. 45 nC)and DMOS technology. This advanced MOSFET technology has been esp

 9.5. fqp10n50cf fqpf10n50cf.pdf Size:987K _fairchild_semi

10N50E1D
10N50E1D

December 2006 TM FRFETFQP10N50CF / FQPF10N50CF 500V N-Channel MOSFETFeatures Description 10A, 500V, RDS(on) = 0.61 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 16pF)This advanced technology has been espe

9.6. zxt10n50de6.pdf Size:229K _diodes

10N50E1D
10N50E1D

ZXT10N50DE6SuperSOT50V NPN SILICON LOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO=50V; RSAT = 75m ; IC= 3ADESCRIPTIONThis new 4th generation ultra low saturation transistor utilises the Zetexmatrix structure combined with advanced assembly techniques to giveextremely low on state losses. This makes it ideal for high efficiency, lowvoltage switching applications.SOT23-6F

9.7. ixz210n50l.pdf Size:318K _ixys

10N50E1D
10N50E1D

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note: All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes

9.8. ixzh10n50la ixzh10n50lb.pdf Size:261K _ixys

10N50E1D
10N50E1D

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 VTJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VG

9.9. ixz2210n50l.pdf Size:247K _ixys

10N50E1D
10N50E1D

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note: All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes

9.10. 10n50.pdf Size:166K _utc

10N50E1D
10N50E1D

UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 10N50 is an N-channel mode power MOSFET usingUTCs advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand 1hig

9.11. rfh10n45 rfh10n50.pdf Size:32K _harris_semi

10N50E1D
10N50E1D

RFH10N45, RFH10N50SemiconductorData Sheet October 1998 File Number 1629.210A, 450V and 500V, 0.600 Ohm, FeaturesN-Channel Power MOSFETs 10A, 450V and 500V[ /TitleThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.600(RFH10power field effect transistors designed for applications such Related Literatureas switching regulators, switching converters, m

9.12. aotf10n50fd.pdf Size:330K _aosemi

10N50E1D
10N50E1D

AOTF10N50FD500V, 10A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF10N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

9.13. cs10n50f a9r.pdf Size:272K _crhj

10N50E1D
10N50E1D

Silicon N-Channel Power MOSFET R CS10N50F A9R General Description VDSS 500 V CS10N50F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

9.14. cs10n50 a8r.pdf Size:266K _crhj

10N50E1D
10N50E1D

Silicon N-Channel Power MOSFET R CS10N50 A8R General Description VDSS 500 V CS10N50 A8R, the silicon N-channel Enhanced ID 10 A PD(TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

9.15. mdp10n50th.pdf Size:729K _magnachip

10N50E1D
10N50E1D

MDP10N50 N-Channel MOSFET 500V, 10.0 A, 0.75 General Description Features The MDP10N50 uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on- ID = 10.0A @VGS = 10V state resistance, high switching performance RDS(ON)

9.16. mdf10n50th.pdf Size:748K _magnachip

10N50E1D
10N50E1D

MDF10N50 N-Channel MOSFET 500V, 10 A, 0.75 General Description Features The MDF10N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 10.0A @ V = 10V D GSswitching performance and excellent quality. R 0.75 @ V = 10V DS(ON) GSMDF10N50 is suitable device for SMPS, high Speed Applications switching and gene

9.17. aotf10n50fd.pdf Size:251K _inchange_semiconductor

10N50E1D
10N50E1D

isc N-Channel MOSFET Transistor AOTF10N50FDFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

9.18. 10n50.pdf Size:209K _inchange_semiconductor

10N50E1D
10N50E1D

isc N-Channel MOSFET Transistor 10N50DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as switching regulators,switching converters,motor drivers,relay drivers anddrivers for power

9.19. 10n50tf.pdf Size:537K _chongqing_pingwei

10N50E1D
10N50E1D

10N50TF10 Amps,500 Volts N-CHANNEL Power MOSFETFEATURETO-220TF 10A,500V,R =0.75@V =10V/5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability Halogen freeAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT10N50TFDrain-Source Voltage V 500DSSVGate-Source Volt

Datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
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