All IGBT. TGL75N120FDR Datasheet

 

TGL75N120FDR Datasheet and Replacement


   Type Designator: TGL75N120FDR
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 658 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.79 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 171 pF
   Package: TO264
 

 TGL75N120FDR substitution

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TGL75N120FDR Datasheet (PDF)

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TGL75N120FDR

TGL75N120FDRField Stop Trench IGBTFeaturesTO - 264 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGL75N120FDR TO-264 TGL75N120FDR

Datasheet: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , RJP30H2A , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

History: STGW50HF60SD | BSM600GA120DLCS | MIO1200-33E11 | IXGA16N60C2 | TGPF15N60FDR | BSM50GAL100D | OST60N65HMF

Keywords - TGL75N120FDR transistor datasheet

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