All IGBT. IRG4PC30K Datasheet

 

IRG4PC30K IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4PC30K

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic|, A: 16

Maximum Junction Temperature (Tj), °C: 175

Package: TO247AC

IRG4PC30K Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PC30K Datasheet (PDF)

0.1. irg4pc30kd.pdf Size:184K _international_rectifier

IRG4PC30K
IRG4PC30K

PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.21V • Combines low conduction losses with high G switchin

0.2. irg4pc30k.pdf Size:127K _international_rectifier

IRG4PC30K
IRG4PC30K

 D IRG4PC30K Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed • Latest generation design

 6.1. irg4pc30f.pdf Size:150K _international_rectifier

IRG4PC30K
IRG4PC30K

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE

6.2. irg4pc30fd.pdf Size:216K _international_rectifier

IRG4PC30K
IRG4PC30K

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V • Generation 4 IGBT design provides tighter G parameter distribution and high

 6.3. irg4pc30u.pdf Size:151K _international_rectifier

IRG4PC30K
IRG4PC30K

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3

6.4. irg4pc30ud.pdf Size:216K _international_rectifier

IRG4PC30K
IRG4PC30K

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V • Generation 4 IGBT design provides tighter G parameter distribution an

 6.5. irg4pc30s.pdf Size:125K _international_rectifier

IRG4PC30K
IRG4PC30K

 D IRG4PC30S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 • Industry sta

6.6. irg4pc30w.pdf Size:121K _international_rectifier

IRG4PC30K
IRG4PC30K

 D IRG4PC30W I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

Datasheet: IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F , IRG4PC30FD , FGPF4633 , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD , IRG4PC30W , IRG4PC40F , IRG4PC40FD , IRG4PC40K .

 

 
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