Справочник IGBT. IRG4PC30K

 

IRG4PC30K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PC30K

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 100

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Максимальный постоянный ток коллектора (Ic): 16

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PC30K

 

 

IRG4PC30K Datasheet (PDF)

1.1. irg4pc30kd.pdf Size:184K _international_rectifier

IRG4PC30K
IRG4PC30K

PD -91587A IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.21V • Combines low conduction losses with high G switchin

1.2. irg4pc30k.pdf Size:127K _international_rectifier

IRG4PC30K
IRG4PC30K

 D IRG4PC30K Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed • Latest generation design

 2.1. irg4pc30f.pdf Size:150K _international_rectifier

IRG4PC30K
IRG4PC30K

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE

2.2. irg4pc30fd.pdf Size:216K _international_rectifier

IRG4PC30K
IRG4PC30K

PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V • Generation 4 IGBT design provides tighter G parameter distribution and high

 2.3. irg4pc30u.pdf Size:151K _international_rectifier

IRG4PC30K
IRG4PC30K

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3

2.4. irg4pc30ud.pdf Size:216K _international_rectifier

IRG4PC30K
IRG4PC30K

PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V • Generation 4 IGBT design provides tighter G parameter distribution an

 2.5. irg4pc30s.pdf Size:125K _international_rectifier

IRG4PC30K
IRG4PC30K

 D IRG4PC30S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 • Industry sta

2.6. irg4pc30w.pdf Size:121K _international_rectifier

IRG4PC30K
IRG4PC30K

 D IRG4PC30W I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

Другие IGBT... IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F , IRG4PC30FD , FGPF4633 , IRG4PC30KD , IRG4PC30S , IRG4PC30U , IRG4PC30UD , IRG4PC30W , IRG4PC40F , IRG4PC40FD , IRG4PC40K .

 

 
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