CM100RL-12NF IGBT. Datasheet pdf. Equivalent

   Type Designator: CM100RL-12NF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 540 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 1900 pF
   Qgⓘ - Total Gate Charge, typ: 400 nC
   Package: MODULE

CM100RL-12NF Transistor Equivalent Substitute - IGBT Cross-Reference Search

CM100RL-12NF Datasheet (PDF)

..1. Size:541K 1
cm100rl-12nf.pdf

CM100RL-12NFPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD + Brakewww.pwrx.comNF-Series Module100 Amperes/600 VoltsE AF DM G H J JKN8 1 1 1 1C BCN UP VP WPP NAA ABKB U V WQUPLT Description:K KK KPowerex IGBTMOD Modules S R R Rare designed for use in switching applications. Each module K

6.1. Size:197K 1
cm100rl-24nf.pdf