CM100TX-24S1 Datasheet. Specs and Replacement

Type Designator: CM100TX-24S1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Coesⓘ - Output Capacitance, typ: 2000 pF

Package: MODULE

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Specs: CM100RX-12A, CM100RX-24S, CM100RX-24S1, CM100TL-12NF, CM100TL-24NF, CM100TU-12F, CM100TU-24F, CM100TX-24S, IRG7R313U, CM10MD-24H, CM1200DB-34N, CM1200DC-34N, CM1200E4C-34N, CM1200HA-34H, CM1200HA-50H, CM1200HA-66H, CM1200HB-50H

Keywords - CM100TX-24S1 transistor spec

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