All IGBT. CM1200DC-34N Datasheet

 

CM1200DC-34N IGBT. Datasheet pdf. Equivalent


   Type Designator: CM1200DC-34N
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 6500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Coesⓘ - Output Capacitance, typ: 9600 pF
   Qgⓘ - Total Gate Charge, typ: 6800 nC
   Package: MODULE

 CM1200DC-34N Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM1200DC-34N Datasheet (PDF)

 ..1. Size:453K  1
cm1200dc-34n.pdf

CM1200DC-34N
CM1200DC-34N

CM1200DC-34NPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comHVIGBT Module1200 Amperes/1700 VoltsADDUK (4 TYP)42QFBC EY3 1Description:E1 Z E2Powerex IGBTMOD Modules AA VG1 G2 M (3 TYP) are designed for use in switching Wapplications. Each module consists C1 C2of two IGBT Transistors in

 7.1. Size:62K  1
cm1200db-34n.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200DB-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200DB-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 2-element in a Pack Cu Baseplate Trench Gate IGBT : CSTB

 8.1. Size:446K  1
cm1200hcb-34n.pdf

CM1200DC-34N
CM1200DC-34N

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

 8.2. Size:44K  1
cm1200ha-66h.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind

 8.3. Size:50K  1
cm1200hb-66h.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC c

 8.4. Size:71K  1
cm1200hc-50h.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 8.5. Size:183K  1
cm1200hc-66h.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 8.6. Size:156K  1
cm1200hb-50h.pdf

CM1200DC-34N
CM1200DC-34N

 8.7. Size:173K  1
cm1200e4c-34n.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200E4C-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200E4C-34N IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate Trench

 8.8. Size:150K  1
cm1200ha-50h.pdf

CM1200DC-34N
CM1200DC-34N

 8.9. Size:101K  1
cm1200ha-34h.pdf

CM1200DC-34N
CM1200DC-34N

 8.10. Size:203K  1
cm1200hg-66h.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200HG-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HG-66H IC ............................................................... 1200 A VCES ...................................................... 3300 V High Insulated Type 1-element in a Pack AISiC BaseplateA

 8.11. Size:179K  1
cm1200hc-34h.pdf

CM1200DC-34N
CM1200DC-34N

MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

Datasheet: CM100TL-12NF , CM100TL-24NF , CM100TU-12F , CM100TU-24F , CM100TX-24S , CM100TX-24S1 , CM10MD-24H , CM1200DB-34N , IHW20N135R5 , CM1200E4C-34N , CM1200HA-34H , CM1200HA-50H , CM1200HA-66H , CM1200HB-50H , CM1200HB-66H , CM1200HC-34H , CM1200HC-50H .

 

 
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