CM1200HA-34H Datasheet and Replacement
Type Designator: CM1200HA-34H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 13800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 1500 nS
Coesⓘ - Output Capacitance, typ: 20000 pF
Qgⓘ - Total Gate Charge, typ: 6600 nC
Package: MODULE
- IGBT Cross-Reference
CM1200HA-34H Datasheet (PDF)
cm1200ha-66h.pdf

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind
cm1200hcb-34n.pdf

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: CRG30T60AK3HD | 1MBI600NN-060 | IKW75N65ES5 | MII145-12A3 | BSM100GB120DN2 | 100MT060WDF
Keywords - CM1200HA-34H transistor datasheet
CM1200HA-34H cross reference
CM1200HA-34H equivalent finder
CM1200HA-34H lookup
CM1200HA-34H substitution
CM1200HA-34H replacement
History: CRG30T60AK3HD | 1MBI600NN-060 | IKW75N65ES5 | MII145-12A3 | BSM100GB120DN2 | 100MT060WDF



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