All IGBT. CM1200HA-34H Datasheet

 

CM1200HA-34H Datasheet and Replacement


   Type Designator: CM1200HA-34H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 13800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1500 nS
   Coesⓘ - Output Capacitance, typ: 20000 pF
   Qgⓘ - Total Gate Charge, typ: 6600 nC
   Package: MODULE
      - IGBT Cross-Reference

 

CM1200HA-34H Datasheet (PDF)

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CM1200HA-34H

 5.1. Size:44K  1
cm1200ha-66h.pdf pdf_icon

CM1200HA-34H

MITSUBISHI HVIGBT MODULESCM1200HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Ind

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cm1200ha-50h.pdf pdf_icon

CM1200HA-34H

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cm1200hcb-34n.pdf pdf_icon

CM1200HA-34H

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: CRG30T60AK3HD | 1MBI600NN-060 | IKW75N65ES5 | MII145-12A3 | BSM100GB120DN2 | 100MT060WDF

Keywords - CM1200HA-34H transistor datasheet

 CM1200HA-34H cross reference
 CM1200HA-34H equivalent finder
 CM1200HA-34H lookup
 CM1200HA-34H substitution
 CM1200HA-34H replacement

 

 
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