CM1200HB-50H Datasheet. Specs and Replacement
Type Designator: CM1200HB-50H 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 15600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
tr ⓘ - Rise Time, typ: 2000 nS
Coesⓘ - Output Capacitance, typ: 19800 pF
Package: MODULE
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CM1200HB-50H Substitution
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CM1200HB-50H datasheet
cm1200hb-66h.pdf
MITSUBISHI HVIGBT MODULES CM1200HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HB-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC c... See More ⇒
cm1200ha-66h.pdf
MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HA-66H IC................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Ind... See More ⇒
Specs: CM100TX-24S1, CM10MD-24H, CM1200DB-34N, CM1200DC-34N, CM1200E4C-34N, CM1200HA-34H, CM1200HA-50H, CM1200HA-66H, IHW20N135R5, CM1200HB-66H, CM1200HC-34H, CM1200HC-50H, CM1200HC-66H, CM1200HCB-34N, CM1200HG-66H, CM1400DU-24NF, CM1400DUC-24S
Keywords - CM1200HB-50H transistor spec
CM1200HB-50H cross reference
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