All IGBT. CM200DY-12H Datasheet

 

CM200DY-12H IGBT. Datasheet pdf. Equivalent


   Type Designator: CM200DY-12H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 780 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 550 nS
   Coesⓘ - Output Capacitance, typ: 7000 pF
   Qgⓘ - Total Gate Charge, typ: 600 nC
   Package: MODULE

 CM200DY-12H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM200DY-12H Datasheet (PDF)

 ..1. Size:39K  powerex
cm200dy-12h.pdf

CM200DY-12H
CM200DY-12H

CM200DY-12HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/600 VoltsABH E E HSC2E1 E2 C1GC KSLDescription:R - M5 THD (3 TYP.)Powerex IGBTMOD ModulesP - DIA. (2 TYP.)are designed for use in switching.110 TABJ J Japplications. Each module consistsN Nof two IGBT Transistors

 4.1. Size:60K  powerex
cm200dy-12nf.pdf

CM200DY-12H
CM200DY-12H

CM200DY-12NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODNF-Series Module200 Amperes/600 VoltsTC MEASURED POINT(BASEPLATE)AF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GDescription:Powerex IGBTMOD ModulesK K Kare designed for use in switchingM NUTS LD(3 PLACES)(2 PLACES) applications. Each module co

 8.1. Size:86K  powerex
cm200du-12f.pdf

CM200DY-12H
CM200DY-12H

CM200DU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignDual IGBTMOD200 Amperes/600 VoltsP - NUTS (3 PLACES)TC MEASURINGPOINTAN DQ (2 PLACES)EC2E1 E2 C1FB GHFDescription:Powerex IGBTMOD Modulesare designed for use in switchingM K K JRapplications. Each module consistsof two IGBT Transisto

 9.1. Size:3465K  willsemi
wcm2007.pdf

CM200DY-12H
CM200DY-12H

WCM2007 WCM2007 N- and P-Channel, 20V, MOSFET Http://www.sh-willsemi.com V(BR)DSS RDS(on) Typical. () 0.18@ 4.5V N-Channel 0.23@ 2.5V 20 V 0.30@ 1.8V ESD protection 0.45@-4.5V P-Channel 0.60@ -2.5V -20 V 0.75@ -1.8V SOT-563 ESD protection Descriptions D1 G2 S26 5 4The WCM2007 is the N- and P-Channel enhancement MOS Field Effect Transistor as a singl

 9.2. Size:1401K  willsemi
wcm2002.pdf

CM200DY-12H
CM200DY-12H

012344350123443678595952581934555]^5iIjN666e56]f^955(I'O(g666N`6 Y5,-%".//#2 g6U VWWXXXYX66m65(I'kjg6N`6'INh6'(6`-66(IOO( ] N^66`lIh6(Ij'(g6Nh6ijjN1-%".//#2566N(IPmjg6Nh668Z[Z5`-'IjN-'(6N(Imn(g6Nh66`-lImI66h6D1 G2 S2#/".!"#63#3+6.

 9.3. Size:1054K  willsemi
wcm2001.pdf

CM200DY-12H
CM200DY-12H

WCM2001WCM2001N- and P-Channel Complementary, 20V, MOSFET Http://www.willsemi.com V(BR)DSS RDS(on) Typ. ( m )180 @ 4.5V N-Channel 225 @ 2.5V20 V 280 @ 1.8V85 @ -4.5V P-Channel 110 @ -2.5V-20 V 150 @ -1.8VD1 G2 S26 5 4DescriptionsThe WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single 1 2 3package for DC-DC converter or Lo

 9.4. Size:105K  powerex
cm200tu-12f.pdf

CM200DY-12H
CM200DY-12H

CM200TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD200 Amperes/600 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesLLLare designed

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top