CM200DY-28H IGBT. Datasheet pdf. Equivalent
Type Designator: CM200DY-28H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 400 nS
Coesⓘ - Output Capacitance, typ: 14000 pF
Qgⓘ - Total Gate Charge, typ: 1020 nC
Package: MODULE
CM200DY-28H Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM200DY-28H Datasheet (PDF)
cm200dy-28h.pdf
CM200DY-28HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Dual IGBTMODH-Series Module200 Amperes/1400 VoltsABF F GPC2E1 E2 C1JC DPDescription:KPowerex IGBTMOD ModulesRQ - M6 THDN - DIA.are designed for use in switching(3 TYP.)(4 TYP.)applications. Each module consists.110 TABM of two IGBT Transistors in a
cm200dy-24h.pdf
MITSUBISHI IGBT MODULESCM200DY-24HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDN - DIA. signed for use in switching applica-(3 TYP.)(4 TYP.)tions. Each module consists of twoTAB#110 t=0.5IGBTs in a half-bridge configurationMLwith each transistor having a re-Mverse-conne
cm200dy-24a.pdf
CM200DY-24APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMODwww.pwrx.comA-Series Module200 Amperes/1200 VoltsAF FE EG2E2 GBJN HC2E1 E2 C1 E1G1 GK K KM NUTS Description:LD(3 PLACES)(2 PLACES)Powerex IGBTMOD Modules are designed for use in switching T THICKP P Papplications. Each module Q Q U W
Datasheet: CM200DU-24NFH , CM200DX-24S , CM200DX-34SA , CM200DY-12H , CM200DY-12NF , CM200DY-24A , CM200DY-24H , CM200DY-24NF , HGTG30N60A4 , CM200E3U-24F , CM200EXS-24S , CM200EXS-34SA , CM200HG-130H , CM200RL-12NF , CM200RL-24NF , CM200RX-12A , CM200RXL-24S .
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