All IGBT. CM200RX-12A Datasheet

 

CM200RX-12A Datasheet and Replacement


   Type Designator: CM200RX-12A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 735 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 150 nS
   Coesⓘ - Output Capacitance, typ: 2700 pF
   Qg ⓘ - Total Gate Charge, typ: 530 nC
   Package: MODULE
 

 CM200RX-12A substitution

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CM200RX-12A Datasheet (PDF)

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CM200RX-12A

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CM200RX-12A

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CM200RX-12A

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CM200RX-12A

CM200RL-12NFPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Six IGBTMOD + BrakeNF-Series Module200 Amperes/600 VoltsADE F H H EG G G MKNLW V UEVABCNB GBX1 8CNGACXJWP VP UPP GDescription:WP1 1 1Powerex IGBTMOD Modules Eare designed for use in switching R S S Kapplications. Each m

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Keywords - CM200RX-12A transistor datasheet

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