CM20MD-12H IGBT. Datasheet pdf. Equivalent
Type Designator: CM20MD-12H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 57 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 1500 pF
Qgⓘ - Total Gate Charge, typ: 60 nC
Package: MODULE
CM20MD-12H Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM20MD-12H Datasheet (PDF)
cm20md-12h.pdf
MITSUBISHI IGBT MODULESCM20MD-12HMEDIUM POWER SWITCHING USEINSULATED TYPECM20MD-12HIC ..................................................................... 20AVCES ............................................................600VInsulated TypeCIB Module3 Inverter+3 Converter+BrakeUL RecognizedYellow Card No. E80276 (N)File No. E80271APPLICATIONAC & DC mo
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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