CM400DY-50H IGBT. Datasheet pdf. Equivalent
Type Designator: CM400DY-50H
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 3400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 2000 nS
Coesⓘ - Output Capacitance, typ: 4400 pF
Qgⓘ - Total Gate Charge, typ: 1800 nC
Package: MODULE
CM400DY-50H Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM400DY-50H Datasheet (PDF)
cm400dy-50h.pdf
MITSUBISHI HVIGBT MODULESCM400DY-50HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-50H IC...................................................................400A VCES ....................................................... 2500V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
cm400dy-66h.pdf
MITSUBISHI HVIGBT MODULESCM400DY-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM400DY-66H IC...................................................................400A VCES ....................................................... 3300V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
cm400dy-24a.pdf
CM400DY-24APowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272Dual IGBTMODA-Series Module400 Amperes/1200 VoltsAF FWG2GE2B HJE NE1GG1C2E1 E2 C1LK K K(4 PLACES) Description:M NUTS D(3 PLACES) Powerex IGBTMOD Modules are designed for use in switching T THICK applications. Each module consists P P PQ Q U WIDTH
cm400dy-12h.pdf
MITSUBISHI IGBT MODULESCM400DY-12HHIGH POWER SWITCHING USEINSULATED TYPEABF F GPC2E1 E2 C1JC DPDescription:KMitsubishi IGBT Modules are de-RQ - M6 THDsigned for use in switching applica-N - DIA.(3 TYP.)(4 TYP.)tions. Each module consists of twoIGBTs in a half-bridge configurationTAB#110 t=0.5ML with each transistor having a re-Mverse-connect
Datasheet: CM400DU-12NFH , CM400DU-24NFH , CM400DU-5F , CM400DX-12A , CM400DY-12H , CM400DY-12NF , CM400DY-24A , CM400DY-24NF , CRG40T60AK3HD , CM400DY-66H , CM400HA-24A , CM400HA-24H , CM400HA-28H , CM400HB-90H , CM400HG-66H , CM400HU-24F , CM450DX-24S .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2