All IGBT. CM50YE13-12H Datasheet

 

CM50YE13-12H IGBT. Datasheet pdf. Equivalent


   Type Designator: CM50YE13-12H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 2000 pF
   Qgⓘ - Total Gate Charge, typ: 150 nC
   Package: MODULE

 CM50YE13-12H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM50YE13-12H Datasheet (PDF)

 ..1. Size:469K  powerex
 cm50ye13-12h.pdf

CM50YE13-12H CM50YE13-12H

CM50YE13-12HPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 TLI-Series www.pwrx.com(Three Level Inverter) IGBT 50 Amperes/600 VoltsA XHJBKLEN WKAD, AFAE, AFLF AD, AFAKD BKLFPKK KMKGVL L LU V WTACN PPRTY (4 PLACES)Q SUDescription:AAThe TLI-Series has been designed CSfor th

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