CM600DY-12NF Datasheet and Replacement
Type Designator: CM600DY-12NF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Coesⓘ - Output Capacitance, typ: 11000 pF
Package: MODULE
- IGBT Cross-Reference
CM600DY-12NF Datasheet (PDF)
cm600dy-34h.pdf

MITSUBISHI HVIGBT MODULESCM600DY-34HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IRG7PH28UD1 | MITB10WB1200TMH | FGA40T65SHDF | JNG40T120HFU1 | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50
Keywords - CM600DY-12NF transistor datasheet
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History: IRG7PH28UD1 | MITB10WB1200TMH | FGA40T65SHDF | JNG40T120HFU1 | STGBL6NC60DI | MMIX4B22N300 | 7MBP100VDA060-50



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