CM600DY-12NF Datasheet and Replacement
Type Designator: CM600DY-12NF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1130 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Coesⓘ - Output Capacitance, typ: 11000 pF
Package: MODULE
CM600DY-12NF substitution
CM600DY-12NF Datasheet (PDF)
cm600dy-34h.pdf
MITSUBISHI HVIGBT MODULESCM600DY-34HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind
Datasheet: CM50TU-24F , CM50YE13-12H , CM600DU-24F , CM600DU-24NFH , CM600DU-5F , CM600DX-24S1 , CM600DXL-24S , CM600DXL-34SA , MGD623S , CM600DY-24A , CM600DY-24S , CM600DY-34H , CM600E2Y-34H , CM600HA-5F , CM600HB-90H , CM600HG-130H , CM600HG-90H .
History: 7MBP100VDA060-50 | CM600DXL-34SA
Keywords - CM600DY-12NF transistor datasheet
CM600DY-12NF cross reference
CM600DY-12NF equivalent finder
CM600DY-12NF lookup
CM600DY-12NF substitution
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History: 7MBP100VDA060-50 | CM600DXL-34SA
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