CM600DY-34H IGBT. Datasheet pdf. Equivalent

   Type Designator: CM600DY-34H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 6900 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1500 nS
   Coesⓘ - Output Capacitance, typ: 10000 pF
   Qgⓘ - Total Gate Charge, typ: 3300 nC
   Package: MODULE

CM600DY-34H Transistor Equivalent Substitute - IGBT Cross-Reference Search

CM600DY-34H Datasheet (PDF)

..1. Size:166K 1
cm600dy-34h.pdf

MITSUBISHI HVIGBT MODULESCM600DY-34HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600DY-34H IC...................................................................600A VCES ....................................................... 1700V Insulated Type 2-elements in a packAPPLICATIONInverters, Converters, DC choppers, Ind

6.1. Size:184K 1
cm600dy-12nf.pdf