All IGBT. CM75TX-24S Datasheet

 

CM75TX-24S IGBT. Datasheet pdf. Equivalent


   Type Designator: CM75TX-24S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Coesⓘ - Output Capacitance, typ: 1500 pF
   Qgⓘ - Total Gate Charge, typ: 175 nC
   Package: MODULE

 CM75TX-24S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM75TX-24S Datasheet (PDF)

 ..1. Size:557K  1
cm75tx-24s.pdf

CM75TX-24S

 9.1. Size:127K  1
cm75tu-24f.pdf

CM75TX-24S
CM75TX-24S

CM75TU-24FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD75 Amperes/1200 VoltsJT (4 TYP.)KS - NUTS (5 TYP)KRCMN PP GUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGU V WPOINT POINTDescription:J JPowerex IGBTMOD ModulesLLLare designed

 9.2. Size:192K  1
cm75tl-24nf.pdf

CM75TX-24S

 9.3. Size:126K  1
cm75tu-12f.pdf

CM75TX-24S
CM75TX-24S

CM75TU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSix IGBTMOD75 Amperes/600 VoltsJT (4 TYP.)S - NUTS (5 TYP) KKRCMN PPGUP EUP GVP EVP GWP EWPL N L N LB EQMGUN EUN GVN EVN GWN EWNTC TC MEASURING MEASURINGPOINT U V W POINTDescription:J JPowerex IGBTMOD ModulesL N L N Lare designe

 9.4. Size:192K  1
cm75tl-12nf.pdf

CM75TX-24S

Datasheet: CM75RL-12NF , CM75RL-24NF , CM75RX-24S , CM75RX-34SA , CM75TL-12NF , CM75TL-24NF , CM75TU-12F , CM75TU-24F , IHW20N120R2 , CM800DY-24S , CM800DZ-34H , CM800DZB-34N , CM800E2C-66H , CM800E2Z-66H , CM800E6C-66H , CM800HA-50H , CM800HA-66H .

 

 
Back to Top