All IGBT. IRG4PC50KD Datasheet

 

IRG4PC50KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4PC50KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 104W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Collector Current |Ic|, A: 30A

Maximum Junction Temperature (Tj), °C: 175

Package: TO247AC

IRG4PC50KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4PC50KD PDF doc:

1.1. irg4pc50k.pdf Size:115K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design provides t

1.2. irg4pc50kd.pdf Size:374K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10s @125C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher effic

1.3. irg4pc50k.pdf Size:121K _igbt_a

IRG4PC50KD
IRG4PC50KD

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed • Latest generation design

1.4. irg4pc50kd.pdf Size:31K _igbt_a

IRG4PC50KD
IRG4PC50KD

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher

Datasheet: IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , 12N60C3D , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD .

 


IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
 
IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
 

social 

LIST

Last Update

IGBT: FF1000R17IE4D_B2 | FF1000R17IE4 | FD-DF80R12W1H3_B52 | FD900R12IP4DV | FD900R12IP4D | FD800R33KL2C-K_B5 | FD800R33KF2C-K | FD800R33KF2C | FD800R17KF6C_B2 | FD800R17KE3_B2 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers