Справочник IGBT. IRG4PC50KD

 

IRG4PC50KD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4PC50KD

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 104

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Максимальный постоянный ток коллектора (Ic): 30

Максимальная температура перехода (Tj): 175

Корпус: TO247AC

Аналог (замена) для IRG4PC50KD

 

 

IRG4PC50KD Datasheet (PDF)

1.1. irg4pc50kd.pdf Size:31K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher

1.2. irg4pc50k.pdf Size:121K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed • Latest generation design

 2.1. irg4pc50w.pdf Size:159K _international_rectifier

IRG4PC50KD
IRG4PC50KD

 D IRG4PC50W I T D T I T I T C Features Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, I

2.2. irg4pc50fd.pdf Size:214K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V • Generation 4 IGBT design provides tighter G parameter distribution and high

 2.3. irg4pc50s.pdf Size:167K _international_rectifier

IRG4PC50KD
IRG4PC50KD

 D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry st

2.4. irg4pc50u.pdf Size:153K _international_rectifier

IRG4PC50KD
IRG4PC50KD

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3

 2.5. irg4pc50f.pdf Size:152K _international_rectifier

IRG4PC50KD
IRG4PC50KD

 D I I T I T D T I T I T Features C Features Features Features Features • Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

2.6. irg4pc50s-p.pdf Size:144K _international_rectifier

IRG4PC50KD
IRG4PC50KD

 D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry

2.7. irg4pc50ud.pdf Size:219K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V • Generation 4 IGBT design provides tighter G parameter distribution an

Другие IGBT... IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , 12N60C3D , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD .

 

 
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