CM800DZB-34N Datasheet. Specs and Replacement
Type Designator: CM800DZB-34N 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 5200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 800 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 600 nS
Coesⓘ - Output Capacitance, typ: 7200 pF
Package: MODULE
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CM800DZB-34N datasheet
..1. Size:204K 1
cm800dzb-34n.pdf 
MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZB-34N IC ...................................................................800A VCES ....................................................... 1700V Insulated Type 2-element in a Pack AISiC Baseplate T... See More ⇒
7.1. Size:762K 1
cm800dz-34h.pdf
CM800DZ-34H HIGH POWER SWITHCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800DZ-34H I 800 A C V 1700 V CES ... See More ⇒
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cm800e2c-66h.pdf
MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) AISiC base plate APPLICA... See More ⇒
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cm800e2z-66h.pdf
MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) APPLICATION DC choppers, ... See More ⇒
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cm800hb-50h.pdf
MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC ch... See More ⇒
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cm800hc-66h.pdf
MITSUBISHI HVIGBT MODULES CM800HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC Baseplate APPLICATION Traction ... See More ⇒
9.6. Size:47K 1
cm800hb-66h.pdf
MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC ch... See More ⇒
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cm800ha-66h.pdf
MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER SWITCHING USE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HA-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Indu... See More ⇒
9.8. Size:182K 1
cm800e6c-66h.pdf
MITSUBISHI HVIGBT MODULES CM800E6C-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E6C-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack (for brake) AISiC Baseplate APPLICAT... See More ⇒
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TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate char... See More ⇒
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tpcm8006.pdf
TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.25 0.05 0.8 0.05 M A 8 5 Small footprint due to a small and thin package 0.2 0 0.2 Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer adm... See More ⇒
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tpcm8002-h.pdf
TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.05 0.25 0.8 0.05 M A 5 Portable Equipment Applications 8 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 9.3 nC... See More ⇒
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tpcm8004-h.pdf
TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A Portable Equipment Applications 8 5 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 5.0 nC (ty... See More ⇒
Specs: CM75RX-34SA, CM75TL-12NF, CM75TL-24NF, CM75TU-12F, CM75TU-24F, CM75TX-24S, CM800DY-24S, CM800DZ-34H, STGB10NB37LZ, CM800E2C-66H, CM800E2Z-66H, CM800E6C-66H, CM800HA-50H, CM800HA-66H, CM800HB-50H, CM800HB-66H, CM800HC-66H
Keywords - CM800DZB-34N transistor spec
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