All IGBT. CM800E2Z-66H Datasheet

 

CM800E2Z-66H IGBT. Datasheet pdf. Equivalent

Type Designator: CM800E2Z-66H

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 10400

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 3.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 800

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 2000

Maximum Collector Capacity (Cc), pF: 12000

Package: MODULE

CM800E2Z-66H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM800E2Z-66H Datasheet (PDF)

9.1. tpcm8002-h.pdf Size:238K _toshiba

CM800E2Z-66H
CM800E2Z-66H

TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications ±0.05 0.25 0.8 0.05 M A 5 Portable Equipment Applications 8 0.2+0 -0.2 • Small footprint due to a small and thin package • High-speed switching 0.55 4 1 • Small gate charge: QSW = 9.3 nC

9.2. tpcm8001-h.pdf Size:538K _toshiba

CM800E2Z-66H
CM800E2Z-66H

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC/DC Converter Applications Unit: mm Notebook PC Applications 0.25±0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2+0 -0.2 • Small footprint due to a small and thin package • High-speed switching 0.55 4 1 • Small gate char

 9.3. tpcm8004-h.pdf Size:218K _toshiba

CM800E2Z-66H
CM800E2Z-66H

TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mm Notebook PC Applications 0.25±0.05 0.8 0.05 M A Portable Equipment Applications 8 5 0.2+0 -0.2 • Small footprint due to a small and thin package • High-speed switching 0.55 4 1 • Small gate charge: QSW = 5.0 nC (ty

9.4. tpcm8003-h.pdf Size:307K _toshiba

CM800E2Z-66H
CM800E2Z-66H

TPCM8003-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 (U-MOSⅤ-H) TPCM8003-H ○ 高効率DC/DCコンバータ用 単位: mm ○ ノートブックPC用 0.25±0.05 0.8 0.05 M A ○ 携帯電子機器用 8 5 0.2+0 -0.2 • 小型、薄型で実装面積が小さい。 • スイッチングスピードが速い。 0.55 4 1 • ゲート

 9.5. tpcm8006.pdf Size:199K _toshiba

CM800E2Z-66H
CM800E2Z-66H

TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications 0.25±0.05 0.8 0.05 M A 8 5 • Small footprint due to a small and thin package 0.2+0 -0.2 • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer adm

9.6. cm800.pdf Size:44K _crystaloncs

CM800E2Z-66H



Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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