CM800E2Z-66H - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: CM800E2Z-66H
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 10400 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 3300 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 800 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.8 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 2000 nS
Coesⓘ - Выходная емкость, типовая: 12000 pF
Qgⓘ - Общий заряд затвора, typ: 5700 nC
Тип корпуса: MODULE
Аналог (замена) для CM800E2Z-66H
CM800E2Z-66H Datasheet (PDF)
cm800e2z-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E2Z-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E2Z-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake)APPLICATIONDC choppers,
cm800e2c-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E2C-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E2C-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-elements in a pack (for brake) AISiC base plateAPPLICA
cm800e6c-66h.pdf
MITSUBISHI HVIGBT MODULESCM800E6C-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800E6C-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack (for brake) AISiC BaseplateAPPLICAT
cm800dzb-34n.pdf
MITSUBISHI HVIGBT MODULESCM800DZB-34NHIGH POWER SWITCHING USE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800DZB-34N IC ...................................................................800A VCES ....................................................... 1700V Insulated Type 2-element in a Pack AISiC Baseplate T
cm800hb-50h.pdf
MITSUBISHI HVIGBT MODULESCM800HB-50HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-50H IC...................................................................800A VCES ....................................................... 2500V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800hc-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HC-66H IC ...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction
cm800hb-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HB-66HHIGH POWER SWITCHING USE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HB-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC ch
cm800dz-34h.pdf
CM800DZ-34H HIGH POWER SWITHCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800DZ-34H I 800 A C V 1700 V CES
cm800ha-66h.pdf
MITSUBISHI HVIGBT MODULESCM800HA-66HHIGH POWER SWITCHING USEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM800HA-66H IC...................................................................800A VCES ....................................................... 3300V Insulated Type 1-element in a packAPPLICATIONInverters, Converters, DC choppers, Indu
tpcm8001-h.pdf
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M A8 5Portable-Equipment Applications 0.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate char
tpcm8003-h.pdf
TPCM8003-H NMOS (U-MOS-H) TPCM8003-H DC/DC : mm PC 0.250.050.80.05 M A 8 50.200.2 0.5541
tpcm8006.pdf
TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.250.050.80.05 M A8 5 Small footprint due to a small and thin package 0.200.2 Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer adm
tpcm8002-h.pdf
TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.050.250.80.05 M A5Portable Equipment Applications 80.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 9.3 nC
tpcm8004-h.pdf
TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M APortable Equipment Applications 8 50.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 5.0 nC (ty
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2