DF1000R17IE4D_B2 Datasheet. Specs and Replacement

Type Designator: DF1000R17IE4D_B2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 6250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1390 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Package: MODULE

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DF1000R17IE4D_B2 datasheet

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DF1000R17IE4D_B2

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DF1000R17IE4D_B2

Technische Information / Technical Information IGBT-Module DF1000R17IE4D_B2 IGBT-modules PrimePACK 3 Modul und NTC PrimePACK 3 module and NTC Vorl ufige Daten / Preliminary Data V = 1700V CES I = 1000A / I = 2000A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hilfsumr... See More ⇒

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DF1000R17IE4D_B2

DF1000R17IE4 PrimePACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1000A / I = 2000A C nom CRM Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter ... See More ⇒

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Specs: CM800HB-66H, CM800HC-66H, CM900DUC-24S, CM900HB-90H, CM900HC-90H, CM900HG-90H, CMH1200DC-34S, DF1000R17IE4, GT30J127, DF120R12W2H3_B27, DF1400R12IP4D, DF150R12RT4, DF160R12W2H3_B11, DF160R12W2H3F_B11, DF200R12KE3, DF200R12PT4_B6, DF200R12W1H3_B27

Keywords - DF1000R17IE4D_B2 transistor spec

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