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DF1000R17IE4D_B2 Specs and Replacement


   Type Designator: DF1000R17IE4D_B2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 6250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 1390 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   tr ⓘ - Rise Time, typ: 100 nS
   Package: MODULE
 

 DF1000R17IE4D_B2 Substitution

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DF1000R17IE4D_B2 specs

 0.1. Size:876K  infineon
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DF1000R17IE4D_B2

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 1.1. Size:680K  infineon
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DF1000R17IE4D_B2

Technische Information / Technical Information IGBT-Module DF1000R17IE4D_B2 IGBT-modules PrimePACK 3 Modul und NTC PrimePACK 3 module and NTC Vorl ufige Daten / Preliminary Data V = 1700V CES I = 1000A / I = 2000A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Chopper-Anwendungen Chopper Applications Hilfsumr... See More ⇒

 2.1. Size:571K  infineon
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DF1000R17IE4D_B2

DF1000R17IE4 PrimePACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1000A / I = 2000A C nom CRM Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Chopper-Anwendungen Chopper applications Hochleistungsumrichter ... See More ⇒

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Specs: CM800HB-66H , CM800HC-66H , CM900DUC-24S , CM900HB-90H , CM900HC-90H , CM900HG-90H , CMH1200DC-34S , DF1000R17IE4 , GT50JR22 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 .

History: CM75TU-12F

Keywords - DF1000R17IE4D_B2 transistor spec

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 DF1000R17IE4D_B2 equivalent finder
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