All IGBT. DF200R12KE3 Datasheet

 

DF200R12KE3 IGBT. Datasheet pdf. Equivalent

Type Designator: DF200R12KE3

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 1040

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 295

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 90

Package: MODULE

DF200R12KE3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DF200R12KE3 Datasheet (PDF)

0.1. df200r12ke3.pdf Size:164K _eupec

DF200R12KE3
DF200R12KE3

Technische Information / technical information IGBT-Module DF200R12KE3 IGBT-Modules Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung Tvj= 25°C VCES 1200 V collector emitter voltage 200 A Kollektor Dauergleichstrom Tc= 80°C IC, nom DC collector current Tc= 25°C IC 295 A Periodischer Kollektor Spitzenst

6.1. df200r12pt4 b6.pdf Size:1029K _infineon

DF200R12KE3
DF200R12KE3

テクニカルインフォメーション / Technical Information IGBT-モジュール DF200R12PT4_B6 IGBT-modules EconoPACK™4 モジュール トレンチ/フィールドストップ IGBT4 and エミッターコントロール diode内蔵 and NTCサーミスタ EconoPACK™4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC V = 1200V CES I = 200A / I = 400A C

6.2. df200r12w1h3 b27.pdf Size:945K _infineon

DF200R12KE3
DF200R12KE3

技术信息 / Technical Information IGBT-模块 DF200R12W1H3_B27 IGBT-modules 初步数据 / Preliminary Data ϑ V = 1200V CES I = 30A / I = 60A C nom CRM 典型应用 Typical Applications • 太阳能应用 • Solar Applications 电气特性 Electrical Features • 低开关损耗 • Low Switching Losses 机械特性 Mechanical Features • 低热阻的三氧化二铝( Al

Datasheet: CMH1200DC-34S , DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , IRG4BC30W-S , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 .

 

 
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