All IGBT. DF200R12PT4_B6 Datasheet

 

DF200R12PT4_B6 IGBT. Datasheet pdf. Equivalent


   Type Designator: DF200R12PT4_B6
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   trⓘ - Rise Time, typ: 35 nS
   Package: MODULE

 DF200R12PT4_B6 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DF200R12PT4_B6 Datasheet (PDF)

 ..1. Size:1029K  infineon
 df200r12pt4 b6.pdf

DF200R12PT4_B6 DF200R12PT4_B6

/ Technical InformationIGBT-DF200R12PT4_B6IGBT-modulesEconoPACK4 / IGBT4 and diode andNTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC

 3.1. Size:833K  infineon
 df200r12pt4-b6.pdf

DF200R12PT4_B6 DF200R12PT4_B6

Technische Information / Technical InformationIGBT-ModuleDF200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

 6.1. Size:945K  infineon
 df200r12w1h3 b27.pdf

DF200R12PT4_B6 DF200R12PT4_B6

/ Technical InformationIGBT-DF200R12W1H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 30A / I = 60AC nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al

 6.2. Size:166K  infineon
 df200r12ke3.pdf

DF200R12PT4_B6 DF200R12PT4_B6

Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst

 6.3. Size:164K  eupec
 df200r12ke3.pdf

DF200R12PT4_B6 DF200R12PT4_B6

Technische Information / technical informationIGBT-ModuleDF200R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage200 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 295 APeriodischer Kollektor Spitzenst

Datasheet: DF1000R17IE4 , DF1000R17IE4D_B2 , DF120R12W2H3_B27 , DF1400R12IP4D , DF150R12RT4 , DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , CRG40T60AN3H , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 .

 

 
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