DF300R12KE3 IGBT. Datasheet pdf. Equivalent

   Type Designator: DF300R12KE3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1470 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 480 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 90 nS
   Qgⓘ - Total Gate Charge, typ: 2800 nC
   Package: MODULE

DF300R12KE3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

DF300R12KE3 Datasheet (PDF)

..1. Size:167K infineon
df300r12ke3.pdf

Technische Information / technical informationIGBT-ModuleDF300R12KE3IGBT-ModulesHchstzulssige Werte / maximum rated valuesElektrische Eigenschaften / electrical propertiesKollektor Emitter SperrspannungTvj= 25C VCES 1200 Vcollector emitter voltage300 AKollektor Dauergleichstrom Tc= 80C IC, nomDC collector current Tc= 25C IC 480 APeriodischer Kollektor Spitzenst

..2. Size:165K eupec
df300r12ke3.pdf

8.1. Size:1042K infineon
df300r07pe4 b6.pdf

/ Technical InformationIGBT-DF300R07PE4_B6IGBT-modulesEconoPACK4 /IGBT4 NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRM Typical Applications

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

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DF300R12KE3 IGBT. Datasheet pdf. Equivalent

DF300R12KE3 Datasheet (PDF)

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AllTransistors(C)2015