DF600R12IP4D PDF and Equivalents Search

 

DF600R12IP4D Specs and Replacement


   Type Designator: DF600R12IP4D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 3350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 600 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   tr ⓘ - Rise Time, typ: 120 nS
   Package: MODULE
 

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DF600R12IP4D datasheet

 ..1. Size:1952K  infineon
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DF600R12IP4D

/ Technical Information IGBT- DF600R12IP4D IGBT-modules PrimePACK 2 / IGBT4 PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode / Preliminary Data V = 1200V CES I = 600A / I = 1200A C nom CRM Typical Applications ... See More ⇒

Specs: DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , RJP30H1DPD , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL .

Keywords - DF600R12IP4D transistor spec

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