All IGBT. DF600R12IP4D Datasheet

 

DF600R12IP4D Datasheet and Replacement


   Type Designator: DF600R12IP4D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 3350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 120 nS
   Qg ⓘ - Total Gate Charge, typ: 4400 nC
   Package: MODULE
 

 DF600R12IP4D substitution

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DF600R12IP4D Datasheet (PDF)

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DF600R12IP4D

/ Technical InformationIGBT-DF600R12IP4DIGBT-modulesPrimePACK2 /IGBT4PrimePACK2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode / Preliminary DataV = 1200VCESI = 600A / I = 1200AC nom CRM Typical Applications

Datasheet: DF160R12W2H3_B11 , DF160R12W2H3F_B11 , DF200R12KE3 , DF200R12PT4_B6 , DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , BT40T60ANF , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL .

Keywords - DF600R12IP4D transistor datasheet

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