DF80R12W2H3_B11 PDF and Equivalents Search

 

DF80R12W2H3_B11 PDF Specs and Replacement


   Type Designator: DF80R12W2H3_B11
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 190 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   tr ⓘ - Rise Time, typ: 10 nS
   Package: MODULE
 

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DF80R12W2H3_B11 PDF specs

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DF80R12W2H3_B11

/ Technical Information IGBT- DF80R12W2H3_B11 IGBT-modules / Preliminary Data V = 1200V CES I = 80A / I = 160A C nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features IGBT ... See More ⇒

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DF80R12W2H3_B11

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 3.2. Size:652K  infineon
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DF80R12W2H3_B11

DF80R12W2H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC V = 1200V CES I = 80A / I = 160A C nom CRM Typische Anwendungen Typical Applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features ... See More ⇒

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Specs: DF200R12W1H3_B27 , DF300R07PE4_B6 , DF300R12KE3 , DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , GT30F126 , DF80R12W2H3F_B11 , DF900R12IP4D , DF900R12IP4DV , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL , DIM1000NSM33-TS , DIM1000XSM33-TL001 .

Keywords - DF80R12W2H3_B11 transistor spec

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