DF80R12W2H3_B11 Datasheet. Specs and Replacement

Type Designator: DF80R12W2H3_B11  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 190 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 10 nS

Package: MODULE

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DF80R12W2H3_B11 datasheet

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DF80R12W2H3_B11

/ Technical Information IGBT- DF80R12W2H3_B11 IGBT-modules / Preliminary Data V = 1200V CES I = 80A / I = 160A C nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features IGBT ... See More ⇒

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DF80R12W2H3_B11

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DF80R12W2H3_B11

DF80R12W2H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC V = 1200V CES I = 80A / I = 160A C nom CRM Typische Anwendungen Typical Applications Solar Anwendungen Solar applications Elektrische Eigenschaften Electrical Features ... See More ⇒

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Specs: DF200R12W1H3_B27, DF300R07PE4_B6, DF300R12KE3, DF400R12KE3, DF600R12IP4D, DF650R17IE4, DF650R17IE4D_B2, DF75R12W1H4F_B11, RJP30E2DPP-M0, DF80R12W2H3F_B11, DF900R12IP4D, DF900R12IP4DV, DIM1000ECM33-TL, DIM1000ECM33-TS, DIM1000NSM33-TL, DIM1000NSM33-TS, DIM1000XSM33-TL001

Keywords - DF80R12W2H3_B11 transistor spec

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