All IGBT. DF80R12W2H3_B11 Datasheet

 

DF80R12W2H3_B11 IGBT. Datasheet pdf. Equivalent


   Type Designator: DF80R12W2H3_B11
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 190
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 10
   Total Gate Charge (Qg), typ, nC: 320
   Package: MODULE

 DF80R12W2H3_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DF80R12W2H3_B11 Datasheet (PDF)

 0.1. Size:916K  infineon
 df80r12w2h3 b11.pdf

DF80R12W2H3_B11 DF80R12W2H3_B11

/ Technical InformationIGBT-DF80R12W2H3_B11IGBT-modules / Preliminary DataV = 1200VCESI = 80A / I = 160AC nom CRM Typical Applications Solar Applications UPS UPS Systems Electrical Features IGBT

 3.1. Size:914K  infineon
 df80r12w2h3f b11.pdf

DF80R12W2H3_B11 DF80R12W2H3_B11

/ Technical InformationIGBT-DF80R12W2H3F_B11IGBT-modules / Preliminary DataV = 1200VCESI = 80A / I = 160AC nom CRM Typical Applications Solar Applications Electrical Features IGBT H3 High Speed IGBT H3 Low Switching Losses thinQ

 3.2. Size:652K  infineon
 df80r12w2h3f-b11.pdf

DF80R12W2H3_B11 DF80R12W2H3_B11

DF80R12W2H3F_B11EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTCEasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTCV = 1200VCESI = 80A / I = 160AC nom CRMTypische Anwendungen Typical Applications Solar Anwendungen Solar applicationsElektrische Eigenschaften Electrical Features

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top