DF900R12IP4DV IGBT. Datasheet pdf. Equivalent
Type Designator: DF900R12IP4DV
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 5100
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Collector-Emitter saturation Voltage |Vcesat|, V: 1.7
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 900
Rise Time, nS: 140
Package: MODULE
DF900R12IP4DV Transistor Equivalent Substitute - IGBT Cross-Reference Search
DF900R12IP4DV Datasheet (PDF)
0.1. df900r12ip4dv.pdf Size:1720K _infineon
Technische Information / Technical Information IGBT-Module DF900R12IP4DV IGBT-modules PrimePACK™2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorläufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications
2.1. df900r12ip4d.pdf Size:1961K _infineon
テクニカルインフォメーション / Technical Information IGBT-モジュール DF900R12IP4D IGBT-modules PrimePACK™2 モジュール トレンチ/フィールドストップ IGBT4 and エミッターコントロール4 diode内蔵 PrimePACK™2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode 暫定データ / Preliminary Data V = 1200V CES I = 900A /
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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