DF900R12IP4DV Datasheet and Replacement
Type Designator: DF900R12IP4DV
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 5100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 900 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
trⓘ - Rise Time, typ: 140 nS
Qgⓘ - Total Gate Charge, typ: 6400 nC
Package: MODULE
- IGBT Cross-Reference
DF900R12IP4DV Datasheet (PDF)
df900r12ip4dv.pdf

Technische Information / Technical InformationIGBT-Module DF900R12IP4DV IGBT-modulesPrimePACK2 Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 DiodePrimePACK2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 900A / I = 1800AC nom CRMTypische Anwendungen Typical Applications
df900r12ip4d.pdf

Technische Information / Technical InformationIGBT-ModuleDF900R12IP4DIGBT-modulesPrimePACK2 Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 DiodePrimePACK2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 900A / I = 1800AC nom CRMTypische Anwendungen Typical Applications
Datasheet: DF400R12KE3 , DF600R12IP4D , DF650R17IE4 , DF650R17IE4D_B2 , DF75R12W1H4F_B11 , DF80R12W2H3_B11 , DF80R12W2H3F_B11 , DF900R12IP4D , IKW75N60T , DIM1000ECM33-TL , DIM1000ECM33-TS , DIM1000NSM33-TL , DIM1000NSM33-TS , DIM1000XSM33-TL001 , DIM1000XSM33-TS001 , DIM100PHM33-F , DIM1200ASM45-TS .
History: TGAN20N150FD | AIKP20N60CT | TGPF20N60FDR
Keywords - DF900R12IP4DV transistor datasheet
DF900R12IP4DV cross reference
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History: TGAN20N150FD | AIKP20N60CT | TGPF20N60FDR



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