All IGBT. DF900R12IP4DV Datasheet

 

DF900R12IP4DV IGBT. Datasheet pdf. Equivalent

Type Designator: DF900R12IP4DV

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 5100

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 900

Rise Time, nS: 140

Package: MODULE

DF900R12IP4DV Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DF900R12IP4DV Datasheet (PDF)

0.1. df900r12ip4dv.pdf Size:1720K _infineon

DF900R12IP4DV DF900R12IP4DV

Technische Information / Technical Information IGBT-Module DF900R12IP4DV IGBT-modules PrimePACK™2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorläufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications

2.1. df900r12ip4d.pdf Size:1961K _infineon

DF900R12IP4DV DF900R12IP4DV

テクニカルインフォメーション / Technical Information IGBT-モジュール DF900R12IP4D IGBT-modules PrimePACK™2 モジュール トレンチ/フィールドストップ IGBT4 and エミッターコントロール4 diode内蔵 PrimePACK™2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode 暫定データ / Preliminary Data V = 1200V CES I = 900A /

 

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