DF900R12IP4DV Datasheet. Specs and Replacement

Type Designator: DF900R12IP4DV  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 5100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 900 A @25℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 140 nS

Package: MODULE

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DF900R12IP4DV datasheet

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DF900R12IP4DV

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DF900R12IP4DV

Technische Information / Technical Information IGBT-Module DF900R12IP4D IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications ... See More ⇒

Specs: DF400R12KE3, DF600R12IP4D, DF650R17IE4, DF650R17IE4D_B2, DF75R12W1H4F_B11, DF80R12W2H3_B11, DF80R12W2H3F_B11, DF900R12IP4D, JT075N065WED, DIM1000ECM33-TL, DIM1000ECM33-TS, DIM1000NSM33-TL, DIM1000NSM33-TS, DIM1000XSM33-TL001, DIM1000XSM33-TS001, DIM100PHM33-F, DIM1200ASM45-TS

Keywords - DF900R12IP4DV transistor spec

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