DIM100PHM33-F Spec and Replacement, IGBT Equivalent Finder, Cross Reference

DIM100PHM33-F Specs and Replacement

   Type Designator: DIM100PHM33-F
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 1300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   tr ⓘ - Rise Time, typ: 225 nS
   Package: MODULE

DIM100PHM33-F Substitution

- IGBT ⓘ Cross-Reference Search

DIM100PHM33-F datasheet

..1. Size:425K dynex
dim100phm33-f.pdf pdf_icon

DIM100PHM33-F000 Half Bridge IGBT Module Replaces DS5764-1.2 DS5764-2 October 2011 (LN28815) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 100A Soft Punch Through Silicon IC(PK) (max) 200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals ... See More ⇒

8.1. Size:492K dynex
dim1000nsm33-ts.pdf pdf_icon

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary ... See More ⇒

8.2. Size:532K dynex
dim1000ecm33-tl.pdf pdf_icon

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS... See More ⇒

8.3. Size:492K dynex
dim1000nsm33-tl.pdf pdf_icon

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10 s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with... See More ⇒