All IGBT. DIM100PHM33-F Datasheet

 

DIM100PHM33-F IGBT. Datasheet pdf. Equivalent

Type Designator: DIM100PHM33-F

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 1300

Maximum Collector-Emitter Voltage |Vce|, V: 3300

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 100

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 225

Package: MODULE

DIM100PHM33-F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM100PHM33-F Datasheet (PDF)

0.1. dim100phm33-f.pdf Size:425K _dynex

DIM100PHM33-F
DIM100PHM33-F

DIM100PHM33-F000 Half Bridge IGBT Module Replaces DS5764-1.2 DS5764-2 October 2011 (LN28815) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V  High Thermal Cycling Capability IC (max) 100A  Soft Punch Through Silicon IC(PK) (max) 200A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals 

8.1. dim1000ecm33-tl.pdf Size:532K _dynex

DIM100PHM33-F
DIM100PHM33-F

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10µs Short Circuit Withstand IC (max) 1000A  High Thermal Cycling Capability IC(PK) (max) 2000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlS

8.2. dim1000xsm33-tl001.pdf Size:484K _dynex

DIM100PHM33-F
DIM100PHM33-F

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS  10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V  Low VCE(sat) Device IC (max) 1000A  10µs Short Circuit Withstand IC(PK) (max) 2000A  High Thermal Cycling Capability * Measured at the auxiliary terminals  High Current Density Enhanced DMOS SPT  I

 8.3. dim1000xsm33-ts001.pdf Size:485K _dynex

DIM100PHM33-F
DIM100PHM33-F

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS  10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V  10µs Short Circuit Withstand IC (max) 1000A  High Thermal Cycling Capability IC(PK) (max) 2000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base With

8.4. dim1000nsm33-ts.pdf Size:492K _dynex

DIM100PHM33-F
DIM100PHM33-F

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 1000A  High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

 8.5. dim1000ecm33-ts.pdf Size:532K _dynex

DIM100PHM33-F
DIM100PHM33-F

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 1000A  High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A  Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

8.6. dim1000nsm33-tl.pdf Size:492K _dynex

DIM100PHM33-F
DIM100PHM33-F

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS  Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V  10µs Short Circuit Withstand IC (max) 1000A  High Thermal Cycling Capability IC(PK) (max) 2000A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals  Isolated AlSiC Base with

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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