DIM100PHM33-F000 Half Bridge IGBT Module Replaces DS5764-1.2 DS5764-2 October 2011 (LN28815) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 100A Soft Punch Through Silicon IC(PK) (max) 200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With