All IGBT. DIM1500ESM33-TS Datasheet

 

DIM1500ESM33-TS IGBT. Datasheet pdf. Equivalent


   Type Designator: DIM1500ESM33-TS
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 15600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1500 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Package: MODULE

 DIM1500ESM33-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM1500ESM33-TS Datasheet (PDF)

 0.1. Size:499K  dynex
 dim1500esm33-ts.pdf

DIM1500ESM33-TS DIM1500ESM33-TS

DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 (LN30425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1500A Soft Punch Through Silicon IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

 0.2. Size:500K  dynex
 dim1500esm33-tl.pdf

DIM1500ESM33-TS DIM1500ESM33-TS

DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 (LN30640) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat)* (typ) 2.0V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

 7.1. Size:487K  dynex
 dim1500asm33-tl001.pdf

DIM1500ESM33-TS DIM1500ESM33-TS

DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 (LN30625) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10.2kV Isolation IC (max) 1500A 10s Short Circuit Withstand IC(PK) (max) 3000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

 7.2. Size:486K  dynex
 dim1500asm33-ts001.pdf

DIM1500ESM33-TS DIM1500ESM33-TS

DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 (LN30405) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1500A High Thermal Cycling Capability IC(PK) (max) 3000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With A

Datasheet: DIM1200ASM45-TS001 , DIM1200ESM33-F , DIM1200FSM12-A , DIM1200FSM17-A , DIM1200FSS12-A , DIM1500ASM33-TL001 , DIM1500ASM33-TS001 , DIM1500ESM33-TL , IHW40T60 , DIM1600ECM17-A , DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A , DIM1800ESM12-A , DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F .

 

 
Back to Top