All IGBT. DIM1600ECM17-A Datasheet

 

DIM1600ECM17-A IGBT. Datasheet pdf. Equivalent


   Type Designator: DIM1600ECM17-A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 13900 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Package: MODULE

 DIM1600ECM17-A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM1600ECM17-A Datasheet (PDF)

 ..1. Size:445K  dynex
 dim1600ecm17-a.pdf

DIM1600ECM17-A DIM1600ECM17-A

Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 (LN28672) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Soft Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 7.1. Size:383K  dynex
 dim1600fsm12-a.pdf

DIM1600ECM17-A DIM1600ECM17-A

DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 (LN27611) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 7.2. Size:418K  dynex
 dim1600fss12-a.pdf

DIM1600ECM17-A DIM1600ECM17-A

DIM1600FSS12-A000 Single Switch IGBT Module Replaces DS5541-2.4 DS5541-3 October 2010 (LN27660) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1600A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3200A Lead Free construction * Measured at the power busbars, not the auxiliary

 7.3. Size:421K  dynex
 dim1600fsm17-a.pdf

DIM1600ECM17-A DIM1600ECM17-A

DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 (LN27663) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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