DIM1600ECM17-A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DIM1600ECM17-A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 13900 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 1600 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃

trⓘ - Tiempo de subida, typ: 200 nS

Encapsulados: MODULE

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DIM1600ECM17-A datasheet

 ..1. Size:445K  dynex
 dim1600ecm17-a.pdf pdf_icon

DIM1600ECM17-A

Preliminary Information DIM1600ECM17-A000 IGBT Chopper Module DS6069-1 September 2011 (LN28672) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Soft Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

 7.1. Size:383K  dynex
 dim1600fsm12-a.pdf pdf_icon

DIM1600ECM17-A

DIM1600FSM12-A000 Single Switch IGBT Module Replaces DS5533-3.1 DS5533-4 October 2010 (LN27611) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 7.2. Size:418K  dynex
 dim1600fss12-a.pdf pdf_icon

DIM1600ECM17-A

DIM1600FSS12-A000 Single Switch IGBT Module Replaces DS5541-2.4 DS5541-3 October 2010 (LN27660) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1600A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 3200A Lead Free construction * Measured at the power busbars, not the auxiliary

 7.3. Size:421K  dynex
 dim1600fsm17-a.pdf pdf_icon

DIM1600ECM17-A

DIM1600FSM17-A000 Single Switch IGBT Module Replaces DS5455-3.2 DS5455-4 October 2010 (LN27663) FEATURES KEY PARAMETERS 10 s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1600A Non Punch Through Silicon IC(PK) (max) 3200A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

MOSTRAR MÁS

Otros transistores... DIM1200ESM33-F, DIM1200FSM12-A, DIM1200FSM17-A, DIM1200FSS12-A, DIM1500ASM33-TL001, DIM1500ASM33-TS001, DIM1500ESM33-TL, DIM1500ESM33-TS, FGPF4633, DIM1600FSM12-A, DIM1600FSM17-A, DIM1600FSS12-A, DIM1800ESM12-A, DIM1800ESS12-A, DIM200PHM33-F, DIM200PKM33-F, DIM200PLM33-F