CRG15T120BNR3S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRG15T120BNR3S 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 32 nS
Coesⓘ - Capacitancia de salida, typ: 35 pF
Encapsulados: TO3P
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CRG15T120BNR3S datasheet
crg15t120bnr3s.pdf
Silicon FS Trench IGBT CRG15T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3P N Features T
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Silicon FS Trench IGBT CRG15T120BK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 236 W Ptot TC=25 VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati
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Silicon FS Trench IGBT CRG15T60A83L, CRG15T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.7 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VC
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Silicon FS Trench IGBT CRG15T60A94S CRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage
Otros transistores... MBQ40T65QES, SSG55N60M, SSG55N60Z, SSG55N60N, SSG55N60P, YGW40N65F1, AOD5B65M1, AOTF15B65M1, BT40T60ANF, GPU200HF120D2SE, RCF1565SL1, RCP1565SL1, RCB1565SL1, RCD1565SL1, KGF65A6H, MGF65A6H, RJH65T14DPQ-A0
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