CRG15T120BNR3S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRG15T120BNR3S
Tipo de transistor: IGBT + Diode
Código de marcado: G15T120BNR3S
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 32 nS
Coesⓘ - Capacitancia de salida, typ: 35 pF
Qgⓘ - Carga total de la puerta, typ: 81.5 nC
Paquete / Cubierta: TO3P
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CRG15T120BNR3S Datasheet (PDF)
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Silicon FS Trench IGBT CRG15T60A94SCRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage
crg15t60a03l.pdf
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