All IGBT. CRG15T120BNR3S Datasheet

 

CRG15T120BNR3S IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG15T120BNR3S
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G15T120BNR3S
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 35 pF
   Qgⓘ - Total Gate Charge, typ: 81.5 nC
   Package: TO3P

 CRG15T120BNR3S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG15T120BNR3S Datasheet (PDF)

 ..1. Size:484K  wuxi china
 crg15t120bnr3s.pdf

CRG15T120BNR3S CRG15T120BNR3S

Silicon FS Trench IGBT CRG15T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

 4.1. Size:1087K  wuxi china
 crg15t120bk3sd.pdf

CRG15T120BNR3S CRG15T120BNR3S

Silicon FS Trench IGBT CRG15T120BK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 236 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 8.1. Size:1352K  wuxi china
 crg15t60a83l crg15t60a93l.pdf

CRG15T120BNR3S CRG15T120BNR3S

Silicon FS Trench IGBT CRG15T60A83L, CRG15T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.7 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VC

 8.2. Size:1253K  wuxi china
 crg15t60a94s crg15t60a84s.pdf

CRG15T120BNR3S CRG15T120BNR3S

Silicon FS Trench IGBT CRG15T60A94SCRG15T60A84S General Description VCES 600 V Using HUAJING's proprietary trench design and advanced IC 15 A VCE(sat) 1.55 V Field Stop (FS) technology, offering superior conduction and switching performances. RoHS Compliant. TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage

 8.3. Size:1123K  wuxi china
 crg15t60a03l.pdf

CRG15T120BNR3S CRG15T120BNR3S

CRG15T60A03L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 15 A Stop (FS) technology, offering superior conduction and switching 96 W Ptot TC=25VCE(sat) 1.7 V performances. RoHS Compliant. TO-263 Features FS Trench Technology, Positive temperature coefficient Low satur

Datasheet: MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , FGA25N120ANTD , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 .

 

 
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