DIM1200FSS12-A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DIM1200FSS12-A
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 10400
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 1200
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.2
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 200
Carga total de la puerta (Qg), typ, nC: 12000
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de DIM1200FSS12-A - IGBT
DIM1200FSS12-A Datasheet (PDF)
dim1200fss12-a.pdf
DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 (LN27661) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1200A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 2400A Lead Free construction * Measured at the power busbars, not the auxiliary
dim1200fsm17-a.pdf
DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th
dim1200fsm12-a.pdf
DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 (LN27662) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the
dim1200asm45-ts.pdf
Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the aux
dim1200esm33-f.pdf
DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 (LN28347) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 1200A Soft Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals L
dim1200asm45-ts001.pdf
Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10s Short Circuit Withstand IC (max) 1200A High Thermal Cycling Capability IC(PK) (max) 2400A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ