All IGBT. DIM1200FSS12-A Datasheet

 

DIM1200FSS12-A IGBT. Datasheet pdf. Equivalent


   Type Designator: DIM1200FSS12-A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 10400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Package: MODULE

 DIM1200FSS12-A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM1200FSS12-A Datasheet (PDF)

 ..1. Size:418K  dynex
 dim1200fss12-a.pdf

DIM1200FSS12-A DIM1200FSS12-A

DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 (LN27661) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V Non Punch Through Silicon IC (max) 1200A Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 2400A Lead Free construction * Measured at the power busbars, not the auxiliary

 5.1. Size:421K  dynex
 dim1200fsm17-a.pdf

DIM1200FSS12-A DIM1200FSS12-A

DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

 5.2. Size:420K  dynex
 dim1200fsm12-a.pdf

DIM1200FSS12-A DIM1200FSS12-A

DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 (LN27662) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1200A Non Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

 7.1. Size:454K  dynex
 dim1200asm45-ts.pdf

DIM1200FSS12-A DIM1200FSS12-A

Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V High Thermal Cycling Capability IC (max) 1200A High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the aux

 7.2. Size:438K  dynex
 dim1200esm33-f.pdf

DIM1200FSS12-A DIM1200FSS12-A

DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 (LN28347) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V High Thermal Cycling Capability IC (max) 1200A Soft Punch Through Silicon IC(PK) (max) 2400A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals L

 7.3. Size:458K  dynex
 dim1200asm45-ts001.pdf

DIM1200FSS12-A DIM1200FSS12-A

Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V 10s Short Circuit Withstand IC (max) 1200A High Thermal Cycling Capability IC(PK) (max) 2400A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals

Datasheet: DIM1000XSM33-TL001 , DIM1000XSM33-TS001 , DIM100PHM33-F , DIM1200ASM45-TS , DIM1200ASM45-TS001 , DIM1200ESM33-F , DIM1200FSM12-A , DIM1200FSM17-A , SGT40N60FD2PN , DIM1500ASM33-TL001 , DIM1500ASM33-TS001 , DIM1500ESM33-TL , DIM1500ESM33-TS , DIM1600ECM17-A , DIM1600FSM12-A , DIM1600FSM17-A , DIM1600FSS12-A .

 

 
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