All IGBT. DIM250PHM33-TS Datasheet

 

DIM250PHM33-TS IGBT. Datasheet pdf. Equivalent


   Type Designator: DIM250PHM33-TS
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 250 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Qgⓘ - Total Gate Charge, typ: 5000 nC
   Package: MODULE

 DIM250PHM33-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM250PHM33-TS Datasheet (PDF)

 ..1. Size:465K  dynex
 dim250phm33-ts.pdf

DIM250PHM33-TS DIM250PHM33-TS

DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 (LN30402) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals APPLICATIONS

 1.1. Size:465K  dynex
 dim250phm33-tl.pdf

DIM250PHM33-TS DIM250PHM33-TS

DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 (LN30665) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN

 7.1. Size:487K  dynex
 dim250pkm33-ts.pdf

DIM250PHM33-TS DIM250PHM33-TS

DIM250PKM33-TS000 IGBT Chopper Module Replaces DS6106-1 DS6106-2 July 2013 (LN30763) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

 7.2. Size:486K  dynex
 dim250plm33-tl.pdf

DIM250PHM33-TS DIM250PHM33-TS

DIM250PLM33-TL000 IGBT Chopper Module DS6115-1 July 2013 (LN30664) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

 7.3. Size:486K  dynex
 dim250pkm33-tl.pdf

DIM250PHM33-TS DIM250PHM33-TS

DIM250PKM33-TL000 IGBT Chopper Module DS6117-1 July 2013 (LN30666) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 250A High Thermal Cycling Capability IC(PK) (max) 500A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with AlN Subs

 7.4. Size:486K  dynex
 dim250plm33-ts.pdf

DIM250PHM33-TS DIM250PHM33-TS

DIM250PLM33-TS000 IGBT Chopper Module Replaces DS6108-1 DS6108-2 July 2013 (LN30764) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 250A High Current Density Enhanced DMOS SPT IC(PK) (max) 500A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminals

Datasheet: DIM1800ESS12-A , DIM200PHM33-F , DIM200PKM33-F , DIM200PLM33-F , DIM2400ESM12-A , DIM2400ESM17-A , DIM2400ESS12-A , DIM250PHM33-TL , RJH3047 , DIM250PKM33-TL , DIM250PKM33-TS , DIM250PLM33-TL , DIM250PLM33-TS , DIM400DCM17-A , DIM400DDM12-A , DIM400DDM17-A , DIM400DDS12-A .

 

 
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