All IGBT. DIM500GCM33-TL Datasheet

 

DIM500GCM33-TL Datasheet and Replacement


   Type Designator: DIM500GCM33-TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 5200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 500 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 430 nS
   Qg ⓘ - Total Gate Charge, typ: 9000 nC
   Package: MODULE
 

 DIM500GCM33-TL substitution

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DIM500GCM33-TL Datasheet (PDF)

 ..1. Size:532K  dynex
dim500gcm33-tl.pdf pdf_icon

DIM500GCM33-TL

DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 (LN31264) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 1.1. Size:532K  dynex
dim500gcm33-ts.pdf pdf_icon

DIM500GCM33-TL

DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-1 DS6098-2 January 2014 (LN31263) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminal

 7.1. Size:522K  dynex
dim500gdm33-tl.pdf pdf_icon

DIM500GCM33-TL

DIM500GDM33-TL000 Dual Switch IGBT Module Replaces DS6113-1 DS6113-2 January 2014 (LN31251) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated

 7.2. Size:522K  dynex
dim500gdm33-ts.pdf pdf_icon

DIM500GCM33-TL

DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-1 DS6097-2 January 2014 (LN31252) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary term

Datasheet: DIM400GCM33-F , DIM400GDM33-F , DIM400NSM33-F , DIM400PBM17-A , DIM400PHM17-A , DIM400XCM33-F , DIM400XCM45-TS , DIM400XCM45-TS001 , GT30J122 , DIM500GCM33-TS , DIM500GDM33-TL , DIM500GDM33-TS , DIM600DCM17-A , DIM600DDM17-A , DIM600DDS12-A , DIM800DCM12-A , DIM800DCM17-A .

History: RGTH60TS65DGC13 | IXYH40N120B3D1

Keywords - DIM500GCM33-TL transistor datasheet

 DIM500GCM33-TL cross reference
 DIM500GCM33-TL equivalent finder
 DIM500GCM33-TL lookup
 DIM500GCM33-TL substitution
 DIM500GCM33-TL replacement

 

 
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