DIM500GCM33-TL - параметры транзистора, его аналоги, Даташиты

DIM500GCM33-TL Datasheet (PDF)

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DIM500GCM33-TL000 IGBT Chopper Module Replaces DS6114-1 DS6114-2 January 2014 (LN31264) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

1.1. Size:532K dynex
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DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-1 DS6098-2 January 2014 (LN31263) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminal

7.1. Size:522K dynex
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DIM500GDM33-TL000 Dual Switch IGBT Module Replaces DS6113-1 DS6113-2 January 2014 (LN31251) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 500A High Thermal Cycling Capability IC(PK) (max) 1000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated

7.2. Size:522K dynex
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DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-1 DS6097-2 January 2014 (LN31252) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 500A High Current Density Enhanced DMOS SPT IC(PK) (max) 1000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary term

Другие IGBT... DIM400GCM33-F , DIM400GDM33-F , DIM400NSM33-F , DIM400PBM17-A , DIM400PHM17-A , DIM400XCM33-F , DIM400XCM45-TS , DIM400XCM45-TS001 , GT30J122 , DIM500GCM33-TS , DIM500GDM33-TL , DIM500GDM33-TS , DIM600DCM17-A , DIM600DDM17-A , DIM600DDS12-A , DIM800DCM12-A , DIM800DCM17-A .