MG06300D-BN4MM Datasheet. Specs and Replacement
Type Designator: MG06300D-BN4MM 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 940 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Package: MODULE
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MG06300D-BN4MM datasheet
mg06300d-bn4mm.pdf
Power Module 600V 300A IGBT Module RoHS MG06300D-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications Agency Approvals High frequency Motion/se... See More ⇒
Specs: DIM800XSM33-F, DIM800XSM45-TS, DIM800XSM45-TS001, MBN400GR12A, MBN600GR12A, MG06100S-BR1MM, MG06150S-BN4MM, MG06200S-BN4MM, GT30F124, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM, MG100Q2YS40, MG100Q2YS50, MG100Q2YS51, MG100Q2YS65H, MG10Q6ES50A
Keywords - MG06300D-BN4MM transistor spec
MG06300D-BN4MM cross reference
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History: DIM800XSM33-F
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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