MG06600WB-BN4MM Datasheet. Specs and Replacement

Type Designator: MG06600WB-BN4MM  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 700 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Package: MODULE

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MG06600WB-BN4MM datasheet

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MG06600WB-BN4MM

Power Module 600V 600A IGBT Module RoHS MG06600WB-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery VCE(sat) with positive Low switching losses temperature coefficient Fast switching and short tail current Applications High frequency switching Motion/servo control... See More ⇒

Specs: MBN400GR12A, MBN600GR12A, MG06100S-BR1MM, MG06150S-BN4MM, MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, CRG40T60AN3H, MG100Q2YS40, MG100Q2YS50, MG100Q2YS51, MG100Q2YS65H, MG10Q6ES50A, MG12100D-BA1MM, MG12100S-BN2MM, MG12100W-XN2MM

Keywords - MG06600WB-BN4MM transistor spec

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