MG100Q2YS40 Datasheet. Specs and Replacement

Type Designator: MG100Q2YS40  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 670 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: MODULE

  📄📄 Copy 

 MG100Q2YS40 Substitution

- IGBTⓘ Cross-Reference Search

 

MG100Q2YS40 datasheet

 ..1. Size:114K  toshiba
 mg100q2ys40.pdf pdf_icon

MG100Q2YS40

... See More ⇒

 4.1. Size:249K  toshiba
 mg100q2ys42.pdf pdf_icon

MG100Q2YS40

... See More ⇒

 5.1. Size:137K  toshiba
 mg100q2ys51.pdf pdf_icon

MG100Q2YS40

... See More ⇒

 5.2. Size:137K  toshiba
 mg100q2ys50.pdf pdf_icon

MG100Q2YS40

... See More ⇒

SHOW MORE

Specs: MBN600GR12A, MG06100S-BR1MM, MG06150S-BN4MM, MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM, MBQ60T65PES, MG100Q2YS50, MG100Q2YS51, MG100Q2YS65H, MG10Q6ES50A, MG12100D-BA1MM, MG12100S-BN2MM, MG12100W-XN2MM, MG12105S-BA1MM

Keywords - MG100Q2YS40 transistor spec

 MG100Q2YS40 cross reference
 MG100Q2YS40 equivalent finder
 MG100Q2YS40 lookup
 MG100Q2YS40 substitution
 MG100Q2YS40 replacement