MG100Q2YS40 Datasheet and Replacement
Type Designator: MG100Q2YS40
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 670 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: MODULE
MG100Q2YS40 substitution
MG100Q2YS40 Datasheet (PDF)
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NGTB30N60FWG | DM2G100SH12A | 1MBC03-120 | VKI50-12P1 | FGHL75T65MQD | IXSH10N120A | NGTB40N60L2
Keywords - MG100Q2YS40 transistor datasheet
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History: NGTB30N60FWG | DM2G100SH12A | 1MBC03-120 | VKI50-12P1 | FGHL75T65MQD | IXSH10N120A | NGTB40N60L2
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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