MG100Q2YS50 Datasheet. Specs and Replacement

Type Designator: MG100Q2YS50  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 660 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: MODULE

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MG100Q2YS50 datasheet

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Specs: MG06100S-BR1MM, MG06150S-BN4MM, MG06200S-BN4MM, MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM, MG100Q2YS40, CRG60T60AN3H, MG100Q2YS51, MG100Q2YS65H, MG10Q6ES50A, MG12100D-BA1MM, MG12100S-BN2MM, MG12100W-XN2MM, MG12105S-BA1MM, MG12150D-BA1MM

Keywords - MG100Q2YS50 transistor spec

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