MG100Q2YS50 PDF and Equivalents Search

 

MG100Q2YS50 PDF Specs and Replacement


   Type Designator: MG100Q2YS50
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 660 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   tr ⓘ - Rise Time, typ: 50 nS
   Package: MODULE
 

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MG100Q2YS50 PDF specs

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Specs: MG06100S-BR1MM , MG06150S-BN4MM , MG06200S-BN4MM , MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , GT30J124 , MG100Q2YS51 , MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM .

History: CM1200HCB-34N

Keywords - MG100Q2YS50 transistor spec

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