MG100Q2YS50 IGBT. Datasheet pdf. Equivalent
Type Designator: MG100Q2YS50
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 660
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.8
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 50
Package: MODULE
MG100Q2YS50 Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG100Q2YS50 Datasheet (PDF)
mg100q2ys65h.pdf
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MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Unit: mmApplications High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2JEDEC G1 E1/C2 G2 JEITA TOSHIBA 2-95A4A Weight: 255 g (typ.) Maximum Ratings (Ta == 25C) ==Characteri
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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