MG10Q6ES50A Datasheet. Specs and Replacement
Type Designator: MG10Q6ES50A 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 80 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Package: MODULE
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MG10Q6ES50A Substitution
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MG10Q6ES50A datasheet
Specs: MG06300D-BN4MM, MG06400D-BN1MM, MG06400D-BN4MM, MG06600WB-BN4MM, MG100Q2YS40, MG100Q2YS50, MG100Q2YS51, MG100Q2YS65H, FGH40N60SFD, MG12100D-BA1MM, MG12100S-BN2MM, MG12100W-XN2MM, MG12105S-BA1MM, MG12150D-BA1MM, MG12150S-BN2MM, MG12150W-XN2MM, MG12200D-BA1MM
Keywords - MG10Q6ES50A transistor spec
MG10Q6ES50A cross reference
MG10Q6ES50A equivalent finder
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History: MG12100S-BN2MM | CM50TU-24F | MG12100D-BA1MM
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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