MG10Q6ES50A Datasheet and Replacement
Type Designator: MG10Q6ES50A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 80 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 70 nS
Package: MODULE
MG10Q6ES50A substitution
MG10Q6ES50A Datasheet (PDF)
Datasheet: MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H , FGPF4536 , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM , MG12200D-BA1MM .
History: IXGT40N60C2D1
Keywords - MG10Q6ES50A transistor datasheet
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History: IXGT40N60C2D1
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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