MG10Q6ES50A PDF Specs and Replacement
Type Designator: MG10Q6ES50A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 80 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
tr ⓘ - Rise Time, typ: 70 nS
Package: MODULE
MG10Q6ES50A Substitution
MG10Q6ES50A PDF specs
Specs: MG06300D-BN4MM , MG06400D-BN1MM , MG06400D-BN4MM , MG06600WB-BN4MM , MG100Q2YS40 , MG100Q2YS50 , MG100Q2YS51 , MG100Q2YS65H , FGD4536 , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM , MG12150S-BN2MM , MG12150W-XN2MM , MG12200D-BA1MM .
History: DIM500GCM33-TL | CM100RX-12A | CM200DY-12NF | CM200DY-28H | RGT40TS65D | MG1225H-XN2MM | BSM75GD120DLC
Keywords - MG10Q6ES50A transistor spec
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History: DIM500GCM33-TL | CM100RX-12A | CM200DY-12NF | CM200DY-28H | RGT40TS65D | MG1225H-XN2MM | BSM75GD120DLC
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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